JPS6016010A - 圧電薄膜複合振動子 - Google Patents
圧電薄膜複合振動子Info
- Publication number
- JPS6016010A JPS6016010A JP12400683A JP12400683A JPS6016010A JP S6016010 A JPS6016010 A JP S6016010A JP 12400683 A JP12400683 A JP 12400683A JP 12400683 A JP12400683 A JP 12400683A JP S6016010 A JPS6016010 A JP S6016010A
- Authority
- JP
- Japan
- Prior art keywords
- thin film
- piezoelectric
- vibrator
- piezoelectric thin
- film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000010409 thin film Substances 0.000 title claims abstract description 135
- 239000002131 composite material Substances 0.000 title claims description 29
- 239000000463 material Substances 0.000 claims abstract description 22
- 239000000758 substrate Substances 0.000 claims description 18
- 239000012212 insulator Substances 0.000 claims description 13
- 239000004065 semiconductor Substances 0.000 claims description 13
- 239000011810 insulating material Substances 0.000 claims 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract description 8
- 229910052681 coesite Inorganic materials 0.000 abstract description 4
- 229910052906 cristobalite Inorganic materials 0.000 abstract description 4
- 239000000377 silicon dioxide Substances 0.000 abstract description 4
- 235000012239 silicon dioxide Nutrition 0.000 abstract description 4
- 229910052682 stishovite Inorganic materials 0.000 abstract description 4
- 229910052905 tridymite Inorganic materials 0.000 abstract description 4
- 230000005855 radiation Effects 0.000 abstract 1
- 239000010408 film Substances 0.000 description 41
- 238000005530 etching Methods 0.000 description 13
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 12
- 229910052710 silicon Inorganic materials 0.000 description 12
- 239000010703 silicon Substances 0.000 description 12
- 238000010586 diagram Methods 0.000 description 9
- 238000000034 method Methods 0.000 description 5
- PIICEJLVQHRZGT-UHFFFAOYSA-N Ethylenediamine Chemical compound NCCN PIICEJLVQHRZGT-UHFFFAOYSA-N 0.000 description 4
- 230000008878 coupling Effects 0.000 description 4
- 238000010168 coupling process Methods 0.000 description 4
- 238000005859 coupling reaction Methods 0.000 description 4
- 239000013078 crystal Substances 0.000 description 4
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 3
- 229910052796 boron Inorganic materials 0.000 description 3
- 239000000919 ceramic Substances 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- 229910005091 Si3N Inorganic materials 0.000 description 2
- YCIMNLLNPGFGHC-UHFFFAOYSA-N catechol Chemical compound OC1=CC=CC=C1O YCIMNLLNPGFGHC-UHFFFAOYSA-N 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 230000005284 excitation Effects 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 238000007373 indentation Methods 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 239000011148 porous material Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
- H03H9/46—Filters
- H03H9/54—Filters comprising resonators of piezoelectric or electrostrictive material
- H03H9/58—Multiple crystal filters
- H03H9/582—Multiple crystal filters implemented with thin-film techniques
- H03H9/586—Means for mounting to a substrate, i.e. means constituting the material interface confining the waves to a volume
- H03H9/588—Membranes
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
- H03H9/02—Details
- H03H9/02007—Details of bulk acoustic wave devices
- H03H9/02086—Means for compensation or elimination of undesirable effects
- H03H9/02102—Means for compensation or elimination of undesirable effects of temperature influence
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
- H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
- H03H9/17—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
- H03H9/171—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator implemented with thin-film techniques, i.e. of the film bulk acoustic resonator [FBAR] type
- H03H9/172—Means for mounting on a substrate, i.e. means constituting the material interface confining the waves to a volume
- H03H9/174—Membranes
Landscapes
- Physics & Mathematics (AREA)
- Acoustics & Sound (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12400683A JPS6016010A (ja) | 1983-07-07 | 1983-07-07 | 圧電薄膜複合振動子 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12400683A JPS6016010A (ja) | 1983-07-07 | 1983-07-07 | 圧電薄膜複合振動子 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6016010A true JPS6016010A (ja) | 1985-01-26 |
| JPH0532925B2 JPH0532925B2 (en]) | 1993-05-18 |
Family
ID=14874695
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP12400683A Granted JPS6016010A (ja) | 1983-07-07 | 1983-07-07 | 圧電薄膜複合振動子 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6016010A (en]) |
Cited By (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002181025A (ja) * | 2000-12-12 | 2002-06-26 | Toshiba Eng Co Ltd | 締付けボルト緩み防止装置 |
| JP2006203304A (ja) * | 2005-01-18 | 2006-08-03 | Hitachi Media Electoronics Co Ltd | 圧電薄膜共振器及びそれを用いた発振器並びにそれを内蔵した半導体集積回路 |
| JP2007510386A (ja) * | 2003-10-30 | 2007-04-19 | アバゴ・テクノロジーズ・ジェネラル・アイピー（シンガポール）プライベート・リミテッド | 温度補償型圧電薄膜共振器（ｆｂａｒ）デバイス |
| JP2007159123A (ja) * | 2005-11-30 | 2007-06-21 | Agilent Technol Inc | 温度補償型薄膜バルク音響共振器デバイス |
| US7657983B2 (en) | 2002-01-11 | 2010-02-09 | Avago Technologies Wireless Ip (Singapore) Pte. Ltd. | Method of producing a topology-optimized electrode for a resonator in thin-film technology |
| EP1047189B1 (en) * | 1999-04-19 | 2011-02-16 | Murata Manufacturing Co., Ltd. | Piezoelectric resonator |
| GB2479977A (en) * | 2010-04-29 | 2011-11-02 | Avago Technologies Wireless Ip | A composite FBAR electrode including a buried temperature compensating layer |
| JP2013038658A (ja) * | 2011-08-09 | 2013-02-21 | Taiyo Yuden Co Ltd | 弾性波デバイス |
| US20140118092A1 (en) * | 2012-10-25 | 2014-05-01 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Accoustic resonator having integrated lateral feature and temperature compensation feature |
| US8941286B2 (en) | 2012-02-14 | 2015-01-27 | Taiyo Yuden Co., Ltd. | Acoustic wave device |
| US9197185B2 (en) | 2010-04-29 | 2015-11-24 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Resonator device including electrodes with buried temperature compensating layers |
| US9559291B2 (en) | 2012-11-15 | 2017-01-31 | Taiyo Yuden Co., Ltd. | Acoustic wave device and method of fabricating the same |
| US9748918B2 (en) | 2013-02-14 | 2017-08-29 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Acoustic resonator comprising integrated structures for improved performance |
| US9929715B2 (en) | 2013-06-10 | 2018-03-27 | Taiyo Yuden Co., Ltd. | Acoustic wave device |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3493315B2 (ja) * | 1998-12-25 | 2004-02-03 | 京セラ株式会社 | 圧電共振子 |
| JP3514222B2 (ja) * | 1999-11-17 | 2004-03-31 | 株式会社村田製作所 | 圧電共振子、電子部品及び電子機器 |
| JP3514224B2 (ja) * | 1999-11-11 | 2004-03-31 | 株式会社村田製作所 | 圧電共振子、フィルタ及び電子機器 |
| US6483229B2 (en) * | 2001-03-05 | 2002-11-19 | Agilent Technologies, Inc. | Method of providing differential frequency adjusts in a thin film bulk acoustic resonator (FBAR) filter and apparatus embodying the method |
-
1983
- 1983-07-07 JP JP12400683A patent/JPS6016010A/ja active Granted
Cited By (18)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP1047189B1 (en) * | 1999-04-19 | 2011-02-16 | Murata Manufacturing Co., Ltd. | Piezoelectric resonator |
| JP2002181025A (ja) * | 2000-12-12 | 2002-06-26 | Toshiba Eng Co Ltd | 締付けボルト緩み防止装置 |
| US7657983B2 (en) | 2002-01-11 | 2010-02-09 | Avago Technologies Wireless Ip (Singapore) Pte. Ltd. | Method of producing a topology-optimized electrode for a resonator in thin-film technology |
| JP2007510386A (ja) * | 2003-10-30 | 2007-04-19 | アバゴ・テクノロジーズ・ジェネラル・アイピー（シンガポール）プライベート・リミテッド | 温度補償型圧電薄膜共振器（ｆｂａｒ）デバイス |
| JP2006203304A (ja) * | 2005-01-18 | 2006-08-03 | Hitachi Media Electoronics Co Ltd | 圧電薄膜共振器及びそれを用いた発振器並びにそれを内蔵した半導体集積回路 |
| JP2007159123A (ja) * | 2005-11-30 | 2007-06-21 | Agilent Technol Inc | 温度補償型薄膜バルク音響共振器デバイス |
| US8436516B2 (en) | 2010-04-29 | 2013-05-07 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Resonator device including electrode with buried temperature compensating layer |
| GB2479977A (en) * | 2010-04-29 | 2011-11-02 | Avago Technologies Wireless Ip | A composite FBAR electrode including a buried temperature compensating layer |
| US9197185B2 (en) | 2010-04-29 | 2015-11-24 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Resonator device including electrodes with buried temperature compensating layers |
| US9479139B2 (en) | 2010-04-29 | 2016-10-25 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Resonator device including electrode with buried temperature compensating layer |
| JP2013038658A (ja) * | 2011-08-09 | 2013-02-21 | Taiyo Yuden Co Ltd | 弾性波デバイス |
| US9184725B2 (en) | 2011-08-09 | 2015-11-10 | Taiyo Yuden Co., Ltd. | Acoustic wave device |
| US8941286B2 (en) | 2012-02-14 | 2015-01-27 | Taiyo Yuden Co., Ltd. | Acoustic wave device |
| US20140118092A1 (en) * | 2012-10-25 | 2014-05-01 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Accoustic resonator having integrated lateral feature and temperature compensation feature |
| US9444426B2 (en) * | 2012-10-25 | 2016-09-13 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Accoustic resonator having integrated lateral feature and temperature compensation feature |
| US9559291B2 (en) | 2012-11-15 | 2017-01-31 | Taiyo Yuden Co., Ltd. | Acoustic wave device and method of fabricating the same |
| US9748918B2 (en) | 2013-02-14 | 2017-08-29 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Acoustic resonator comprising integrated structures for improved performance |
| US9929715B2 (en) | 2013-06-10 | 2018-03-27 | Taiyo Yuden Co., Ltd. | Acoustic wave device |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0532925B2 (en]) | 1993-05-18 |
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